| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947201 | Microelectronics Reliability | 2012 | 5 Pages |
Abstract
This paper deals with the physical study of the Schottky contact after pulsed-RF saturated life test under enhanced drain bias voltage on power HEMTs. Electrical measurements showed a pinch-off voltage (VP) shift, a decrease of output power and average drain current while Photon Emission Microscopy (PEM) was used to identify the degradation distribution along the 80 fingers die. Finally, Transmission Electron Microscopy (TEM) is performed to point out the different Schottky degradation between a central finger and an outer one.
Related Topics
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Authors
J.-B. Fonder, L. Chevalier, C. Genevois, O. Latry, C. Duperrier, F. Temcamani, H. Maanane,