| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947222 | Microelectronics Reliability | 2012 | 5 Pages |
Abstract
We present a comprehensive study on a high reliability RF-MEMS switch with an active thermal recovery capability to counteract stiction. Applying finite element (FE) simulations we investigate the complete recovery process including mechanical, electrical, thermal and fluidic effects. The experimentally calibrated thermo-mechanical FE-model is used to extract key parameters of the recovery process. Therewith we are able to estimate the efficiency of the recovery capability and to figure out possible design improvements in order to optimize the investigated switch with respect to reliability.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
T. Kuenzig, G. Schrag, J. Iannacci,