Article ID Journal Published Year Pages File Type
6947245 Microelectronics Reliability 2011 5 Pages PDF
Abstract
► We present some efficient methods to improve the reliability of STT-MRAM. ► New design strategy like cross-point architecture allows high density towards Gbit. ► A theoretical analysis of erroneous sensing is described. ► New STT-MRAM cell selection method is proposed with two transistors shared by MTJs.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
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