Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6947245 | Microelectronics Reliability | 2011 | 5 Pages |
Abstract
⺠We present some efficient methods to improve the reliability of STT-MRAM. ⺠New design strategy like cross-point architecture allows high density towards Gbit. ⺠A theoretical analysis of erroneous sensing is described. ⺠New STT-MRAM cell selection method is proposed with two transistors shared by MTJs.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
W.S. Zhao, T. Devolder, Y. Lakys, J.O. Klein, C. Chappert, P. Mazoyer,