| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947277 | Microelectronics Reliability | 2011 | 5 Pages |
Abstract
âºÂ NBTI and PBTI degradation of MOSFETs with SiON or SiO2 gate dielectrics is studied. âºÂ For devices with p++ doped poly gate NBTI-like degradation may occur under PBTI. âºÂ In the absence of holes, acceptor-like defects are created through PBTI.
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Hardware and Architecture
Authors
Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel,