| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947284 | Microelectronics Reliability | 2011 | 4 Pages |
Abstract
⺠Effects of static and pulsed NBT stressing in p-channel VDMOSFETs are investigated. ⺠The results for static and pulsed stress are compared in terms of device lifetime. ⺠Device lifetime is found to be longer under the pulsed stress conditions. ⺠Lifetime tends to increase with decreasing the duty cycle of pulsed stress voltage.
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Authors
I. ManiÄ, D. DankoviÄ, A. PrijiÄ, V. DavidoviÄ, S. DjoriÄ-VeljkoviÄ, S. GoluboviÄ, Z. PrijiÄ, N. StojadinoviÄ,