Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6947297 | Microelectronics Reliability | 2011 | 4 Pages |
Abstract
⺠We use a simple model Sakurai-Newton model to model a 90 nm NMOSFET. ⺠This model can well present the effect of hot carrier injection. ⺠This model can well present DC offset of drain current induced by EMI coupling on transistor terminals. ⺠We study the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
B. Li, N. Berbel, A. Boyer, S. BenDhia, R. Fernández-GarcÃa,