Article ID Journal Published Year Pages File Type
6947297 Microelectronics Reliability 2011 4 Pages PDF
Abstract
► We use a simple model Sakurai-Newton model to model a 90 nm NMOSFET. ► This model can well present the effect of hot carrier injection. ► This model can well present DC offset of drain current induced by EMI coupling on transistor terminals. ► We study the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Authors
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