| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947332 | Microelectronics Reliability | 2011 | 6 Pages |
Abstract
⺠The EOS/ESD sensitivity of a GaAs RF power amplifier was investigated under HBM, MM and TLP regimes. ⺠Hard breakdown failure modes were identified due to passive components failure. ⺠The high current injection state of active components was analyzed. ⺠PHEMT Safe Operating Area was extracted from breakdown measurements at different Gate voltages.
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Authors
Augusto Tazzoli, Isabella Rossetto, Enrico Zanoni, Dai Yufeng, Tiziana Tomasi, Gaudenzio Meneghesso,