Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6947339 | Microelectronics Reliability | 2011 | 4 Pages |
Abstract
The reliability of electronic devices against electrostatic discharge stresses is still a severe challenge, particularly for deep sub-micron technologies such as the CMOS 32Â nm in this work. This paper presents a local ESD protection structure based on dynamic triggered SCR and qualifies through TLP and vf-TLP for GO1Â =Â 1Â V and GO2Â =Â 1.8Â V power domain.
Related Topics
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Authors
J. Bourgeat, P. Galy, A. Dray, J. Jimenez, D. Marin-Cudraz, B. Jacquier,