Article ID Journal Published Year Pages File Type
6947339 Microelectronics Reliability 2011 4 Pages PDF
Abstract
The reliability of electronic devices against electrostatic discharge stresses is still a severe challenge, particularly for deep sub-micron technologies such as the CMOS 32 nm in this work. This paper presents a local ESD protection structure based on dynamic triggered SCR and qualifies through TLP and vf-TLP for GO1 = 1 V and GO2 = 1.8 V power domain.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
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