| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947354 | Microelectronics Reliability | 2011 | 6 Pages |
Abstract
⺠Analysis of interaction effects during laser stimulation on MOSFET done. ⺠Effects occurring during the 1064 nm laser stimulation characterized. ⺠Impact ionization current becomes significant when high laser power applied. ⺠Results are being verified by device simulation.
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Authors
Sanjib Kumar Brahma, Arkadiusz Glowacki, Reiner Leihkauf, Christian Boit,