Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6947361 | Microelectronics Reliability | 2011 | 5 Pages |
Abstract
The increasing demand for electrical failure analysis (EFA) in yield enhancement [1] has created new challenges for foundries and their clients. Dynamic EFA techniques, more in demand with the smaller technology nodes, have largely been the domain of the design-house failure analysis (FA) lab. In 2010 on 40Â nm packaged parts, a new laser-based technology, laser voltage imaging (LVI) was applied to shift debug and drove physical failure analysis (PFA) success rate to >90%. This is still the case in 2011 on 28Â nm ICs. The methodology was validated at the foundry on 32Â nm wafers and again drove the PFA success rate to >90%. This paper offers a foundry-friendly methodology made possible by LVI and its fast track to the wafer level.
Related Topics
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Authors
C. Kardach, I. Kapilevich, J. Block, T. Lundquist, S. Kasapi, J. Liao, Y.S. Ng, B. Cory,