Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6947367 | Microelectronics Reliability | 2011 | 6 Pages |
Abstract
Scanning electron microscopy is still the technique of choice for imaging and for in-line measurement of critical dimensions and overlay accuracy in most of the core technology processes. In particular, critical dimension microscopy provides information about design template matching and edge placement errors through links with design having proven beneficial effects on process yield and product reliability. In this paper, the use of high performance computing is demonstrated to simulate linescans and 2D secondary electron images to be used in optical proximity error correction strategies for nanometer scale technologies.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Aniello Esposito, Mauro Ciappa, Wolfgang Fichtner,