Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
6947387 | Microelectronics Reliability | 2011 | 5 Pages |
Abstract
⺠We localize the defect through the backside thinned die. ⺠We locally thin grind a cavity over the defect from the backside. ⺠TMAH etches the remaining Silicon over the cavity. ⺠The defect is then directly observable from the backside.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
A. Laroche, P. Rousseille, T. Zirilli,