| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947389 | Microelectronics Reliability | 2011 | 4 Pages |
Abstract
⺠We assessed the impact of high temperature storage test on GaN HEMTs. ⺠We observed that only the gate and drain leakage currents were strongly affected by this test. ⺠The physical failure analysis revealed a Au inter-diffusion phenomenon at the gate level, affecting the gate-AlGaN interface. ⺠We speculated that Au inter-diffusion was at the origin of the gate leakage current increase.
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Authors
D. Marcon, X. Kang, J. Viaene, M. Van Hove, P. Srivastava, S. Decoutere, R. Mertens, G. Borghs,