| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947397 | Microelectronics Reliability | 2011 | 5 Pages |
Abstract
For the same device periphery, the Gate-to-Gate pitch influence has also been experimentally investigated and correlated to the channel temperature. Finally, relevant information about the maximum power dissipation has been pointed out, and an accurate description of the electro-thermal behaviour observed experimentally is given.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Riccio, A. Pantellini, A. Irace, G. Breglio, A. Nanni, C. Lanzieri,