| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947417 | Microelectronics Reliability | 2011 | 5 Pages |
Abstract
⺠The adhesion strength between SiO2 and GaP was measured by four-point bend test. ⺠The modified virtual crack closure technique was used in finite element analysis. ⺠The predicted G value was compared and identical with experiment results. ⺠Interfacial strengths in the SiO2/GaP and SiO2/GaAs are weaker than the others.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Tsung-Lin Chou, Shin-Yueh Yang, Chung-Jung Wu, Cheng-Nan Han, Kou-Ning Chiang,