| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947431 | Microelectronics Reliability | 2011 | 4 Pages |
Abstract
⺠We examine the GaN-on-Si based RF power amplifier degradation. ⺠Improper thermal contact may cause the PA performance degradation. ⺠Reducing the heat spread distance can improve the PA performance. ⺠Increasing the thermal dissipation area can improve the PA performance.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
R. Liu, D. Schreurs, W. De Raedt, F. Vanaverbeke, R. Mertens, I. De Wolf,