| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947458 | Microelectronics Reliability | 2011 | 6 Pages |
Abstract
⺠In this study we observe ageing mechanisms of the metallisation layer deposited on the chips of power semiconductor devices. ⺠We also study the effect of aluminium metallisation degradation on electrical performances of a power transistor. ⺠The resistance of the metallization layer is measured during ageing process. ⺠Increase in the metallisation resistance is linked to the degradation of the aluminium layer.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
S. Pietranico, S. Lefebvre, S. Pommier, M. Berkani Bouaroudj, S. Bontemps,