Article ID Journal Published Year Pages File Type
6947480 Microelectronics Reliability 2011 5 Pages PDF
Abstract
► First separated simulation of the Cu and Sn migration in Cu6Sn5 and Cu3Sn. ► Identification of reasons for the void formation at Cu6Sn5/Cu3Sn interfaces. ► Determination of the averaged effective ionic charge (Z∗) of Cu6Sn5 and Cu3Sn. ► Comparison between the electromigration induced mass flux in Cu-Sn IMCs and SAC. ► Identification of reasons for void formation at SAC/IMC interfaces.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Migration induced material transport in Cu-Sn IMC and SnAgCu microbumps
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