| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 6947494 | Microelectronics Reliability | 2011 | 4 Pages |
Abstract
⺠TDS was used to study outgassing from thin films used for MEMS vacuum package. ⺠We studied the outgassing of polycrystalline SiGe, SiC and SiO2 films. ⺠Primary desorption products were found to be H2, H2O and CO2. ⺠The CO2 could be correlated with CF4 plasma interface cleaning used for SiGe PECVD.
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Authors
B. Wang, S. Tanaka, B. Guo, G. Vereecke, S. Severi, A. Witvrouw, M. Wevers, I. De Wolf,