Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7726969 | Journal of Power Sources | 2016 | 8 Pages |
Abstract
Migration of transition metal (TM) ions to tetrahedral sites plays a crucial role on structural transformation and electrochemical behaviors for Li-rich layered oxides. Here, incorporating small B3+ in the tetrahedral interstice is employed to block the migration channel of TM ions and stabilize the crystal structure. Benefiting from their good structural stability, Li-rich layered materials with B-doped Li1.198Ni0.129Co0.129Mn0.535B0.01O2 and Li1.196Ni0.127Co0.127Mn0.529B0.02O2, exhibit excellent cycling performance and voltage stability. After 51 cycles at 0.2Â C, 1Â mol.% boron incorporated sample can deliver 211Â mAh gâ1 with capacity retention of 89.9%, which is much higher than that of the undoped sample of 177Â mAh gâ1 with the retention of 79.2%. Moreover, the declined voltage per cycle decreases from 3.6885Â mV to 2.7530Â mV after 2Â mol.% boron doping. XRD patterns after extended cycling verified the suppression of the structural transformation by the incorporation of boron.
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Authors
Lingchao Pan, Yonggao Xia, Bao Qiu, Hu Zhao, Haocheng Guo, Kai Jia, Qingwen Gu, Zhaoping Liu,