Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7728041 | Journal of Power Sources | 2016 | 9 Pages |
Abstract
The issues of rough surface morphology and the incorporated additives of the electro-deposited Cu layers, which exists in electrodeposition-based processes, is one of the major obstacles to improve the efficiency of Cu(In,Ga)Se2 (CIGSe) and Cu2ZnSnSe4 (CZTSe) solar cells. In this study, the pulse current electro-deposition method is employed to deposit smooth Cu film on Mo substrate in CuSO4 solution without any additives. Grain size of the deposited Cu film is decreased by high cathode polarization successfully. And the concentration polarization, which results from high pulse current density, is controlled successfully by adjusting the pulse frequency. Flat Cu film with smooth surface and compact structure is deposited as pulse current density @ 62.5Â mAÂ cmâ2, pulse frequency @100,000Â Hz, and duty cycle @ 25%. CIGSe and CZTSe absorber films with flat surface and uniform elemental distribution are prepared by selenizing the stacking metal layers electro-deposited by pulse current method. Finally, the CIGSe and CZTSe solar cells with conversion efficiency of 10.39% and 7.83% respectively are fabricated based on the smooth Cu films, which are better than the solar cells fabricated by the rough Cu film deposited by direct current electro-deposition method.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Jinlian Bi, Liyong Yao, Jianping Ao, Shoushuai Gao, Guozhong Sun, Qing He, Zhiqiang Zhou, Yun Sun, Yi Zhang,