Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7730974 | Journal of Power Sources | 2015 | 7 Pages |
Abstract
Compared with Ni/YSZ-Ov, the Ni/(YSZÂ +Â O)-Ov can effectively not only weaken the S adsorption at the interface O vacancy site, but also improve the diffusion of S out of the interface O vacancy. Therefore, the Ni/YSZÂ +Â O can help to alleviate the sulfur poisoning at the interface O vacancy site as compared with the Ni/YSZ.228
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Yanxing Zhang, Zhengyang Wan, Zongxian Yang,