| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 7740986 | Journal of Power Sources | 2013 | 5 Pages |
Abstract
⺠Mixed (ZnO:GaN) thin film for solar driven hydrogen production. ⺠The mixed (ZnO:GaN) thin films deposited under Ar gas ambient failed to reduce the bandgap. ⺠Whereas, (ZnO:GaN) thin films grown under mixed O2 and N2 gas ambient showed bandgap reduction. ⺠The bandgap of (ZnO:GaN) thin films was tuned by varying the RF power. ⺠Enhanced crystallinity and visible light absorption resulted in improved photoresponse
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Authors
Sudhakar Shet, Yanfa Yan, John Turner, Mowafak Al-Jassim,