Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
7742609 | Journal of Power Sources | 2013 | 5 Pages |
Abstract
⺠A new method (novel dual plasma deposition approach) to deposit Si and C together. ⺠Near theoretical stable capacity can be achieved for Si layer. ⺠A critical thickness of 20 nm is found for the Si layer.
Related Topics
Physical Sciences and Engineering
Chemistry
Electrochemistry
Authors
Wei Li, Rong Yang, Xiaojuan Wang, Teng Wang, Jie Zheng, Xingguo Li,