| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9671869 | Microelectronics Journal | 2005 | 4 Pages |
Abstract
Precise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (MD) experiments. Tiny sample misalignments can compromise systematic usage of MD in studies where accuracy is an important issue. In this work, theoretical treatment and experimental methods for correcting residual misalignment errors are presented and applied to probe the induced strain of buried InAs quantum dots on GaAs (001) substrates.
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Authors
S.L. Morelhão, L.H. Avanci, R. Freitas, A.A. Quivy,