| Article ID | Journal | Published Year | Pages | File Type | 
|---|---|---|---|---|
| 9671874 | Microelectronics Journal | 2005 | 4 Pages | 
Abstract
												In this work we report about photoluminescence investigations and the first observation of lasing in highly ordered, crystalline para-sexiphenyl (PSP) films grown by hot wall epitaxy on mica substrates. We demonstrate also the fabrication of hot wall epitaxially grown PSP layers for blue light emitting diodes. The electroluminescence (EL) shows two peaks at 425 and 450 nm, which coincide with the corresponding photoluminescence spectra. The electric field required for the onset of the EL in our single layer devices is comparable with that for optimized multilayer devices based on PSP.
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											Authors
												A. Andreev, F. Quochi, H. Sitter, H. Hoppe, S. Sariciftci, A. Mura, G. Bongiovanni, 
											