Article ID Journal Published Year Pages File Type
9671874 Microelectronics Journal 2005 4 Pages PDF
Abstract
In this work we report about photoluminescence investigations and the first observation of lasing in highly ordered, crystalline para-sexiphenyl (PSP) films grown by hot wall epitaxy on mica substrates. We demonstrate also the fabrication of hot wall epitaxially grown PSP layers for blue light emitting diodes. The electroluminescence (EL) shows two peaks at 425 and 450 nm, which coincide with the corresponding photoluminescence spectra. The electric field required for the onset of the EL in our single layer devices is comparable with that for optimized multilayer devices based on PSP.
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Physical Sciences and Engineering Computer Science Hardware and Architecture
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