| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9671900 | Microelectronics Journal | 2005 | 4 Pages |
Abstract
A new theoretical model is presented in which the radiation-induced zero-resistance states and resistivity oscillations are analyzed. The basis of our model is an exact solution for the harmonic oscillator wave function in the presence of radiation and a perturbation treatment for elastic scattering due to randomly distributed charged impurities. Following this model most experimental results are reproduced: zero-resistance states, resistivity oscillations and the dependence of resistivity with temperature, where a physical model of interaction with acoustic phonon is presented, and an activation energy is calculated.
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Authors
Jesús Iñarrea, Gloria Platero,