Pressure and magnetic field effects on the binding energy of excitonic states in single and coupled GaAs-AlGaAs quantum wells

We have calculated the binding energy for the ground state and the 2P_like state of a light-hole exciton in GaAs-Al0.3Ga0.7As single and double quantum wells, under the action of a hydrostatic pressure and a magnetic field applied in the growth direction. We have used a variational scheme and hydrogenic-like trial wave function for the ground exciton state. We have considered that the well and the barrier material have the same dielectric constant and the carriers have different effective mass in these regions. We have found that the effects of the magnetic field on the binding energy are more evident than those due to the hydrostatic pressure. Also, we have found a good agreement not also with previous theoretical results on the binding energy pressure dependence in quantum wells, but with recent experimental reports.