| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9671911 | Microelectronics Journal | 2005 | 4 Pages |
Abstract
The Landé g factor has been measured for electrons in ultra-thin InGaAs/InP quantum wells by means of an electrically-detected electron spin resonance (EDESR) technique. These experiments, carried out in a range of applied magnetic fields, allowed direct, unambiguous determination of both the absolute value and sign of the normal component of the electron g factor, g⥠(g parallel to the structure growth axis and the magnetic field). We observed a linear magnetic field dependence to the g factor, in agreement with the expression gâ¥(B,N)=gâ¥0+c(N+1/2)B, where N is the Landau level index.
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Authors
E.T. Croke, R.N. Schwartz, B. Shi, A.A. Narayanan, A.A. Kiselev, M.F. Gyure,