Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9671914 | Microelectronics Journal | 2005 | 4 Pages |
Abstract
The miniband and minigap structures of the lateral superlattice quantum wires in grid-inserted quantum well are analyzed by using a self-consistent finite-element method with a periodic boundary condition. Conduction band diagram and the mobile charge concentration as well as the energy dispersion relation are self-consistently analyzed. It is shown that even a few monolayers of AlAs at the center of the GaAs quantum well can create a minigap greater than 10Â meV resulting in anisotropic carrier transport.
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Authors
Jong Chang Yi,