Article ID Journal Published Year Pages File Type
9671914 Microelectronics Journal 2005 4 Pages PDF
Abstract
The miniband and minigap structures of the lateral superlattice quantum wires in grid-inserted quantum well are analyzed by using a self-consistent finite-element method with a periodic boundary condition. Conduction band diagram and the mobile charge concentration as well as the energy dispersion relation are self-consistently analyzed. It is shown that even a few monolayers of AlAs at the center of the GaAs quantum well can create a minigap greater than 10 meV resulting in anisotropic carrier transport.
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Physical Sciences and Engineering Computer Science Hardware and Architecture
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