| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9671946 | Microelectronics Journal | 2005 | 4 Pages |
Abstract
The ability of different impurities to enhance the electroluminescence (EL) of Si nanoclusters (nc-Si) in SiO2 has been investigated. Doped nc-Si films were fabricated by implantation of Si+, P+ and/or B+ into thermal SiO2 and subsequent heat treatment. The photoluminescence and EL of differently doped nc-Si produced by annealing at 1100 and 1000 °C were compared. It was found that EL related to impact excitation by hot electrons and its improvement is caused by reducing of phase separation temperature for doped nc-Si films.
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Authors
V. Ovchinnikov, S. Novikov, T. Toivola, J. Sinkkonen,