Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9671948 | Microelectronics Journal | 2005 | 4 Pages |
Abstract
Paper presents the comparative investigation of photoluminescence and Raman scattering spectra of pure amorphous silicon films and amorphous silicon films with different size Si nanocrystallites. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.14 and 1.36Â eV have been revealed in studied samples. The 0.90-0.98Â eV PL bands are attributed to the band tail luminescence in Si nano crystallites with the size of 15-20 Â nm. Concurrently, the 1.18 and 1.36Â eV PL bands are connected, apparently, with radiative transition between quantum confined levels within Si QDs (size of 5-6Â nm) embedded into a-Si matrix.
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Authors
A. Vivas Hernandez, T.V. Torchynska, Y. Matsumoto, S. Jimenez Sandoval, M. Dybiec, S. Ostapenko, L.V. Shcherbina,