| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672142 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
Recessed channel (Rch) structure n-MOSFET has been stressed under hot carrier injected condition and constant voltage stress (CVS). The degraded data are compared with planar channel (Pch) structure. We discuss difference of hot carrier (HC) degradation and oxide lifetime, which can be explained by the electrical field suppression and gate oxide thickness (tox) reduction in recessed channel area.
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Physical Sciences and Engineering
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Authors
J.Y. Seo, K.J. Lee, Y.S. Kim, S.Y. Lee, S.J. Hwang, C.K. Yoon,