| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672161 | Microelectronics Reliability | 2005 | 6 Pages |
Abstract
The failure signatures of a grounded-base NPN bipolar ESD protection under multiple TLP and HBM stresses are analyzed. For this particular device having a graded collector region, multiple TLP or HBM stresses result in different types of defects. OBIC techniques and TCAD simulations are used to thoroughly analyze the involved physical mechanisms.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
N. Guitard, F. Essely, D. Trémouilles, M. Bafleur, N. Nolhier, P. Perdu, A. Touboul, V. Pouget, D. Lewis,