Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9672168 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
This paper describes a mechanism of failures in W-plug vias due to the keyhole generation, and presents the process conditions which enhance the reliability of W-plug vias. For a high aspect ratio via-hole, one of the limiting factors in the reliability of the W-plug is the generation of the keyholes. We have investigated the sensitivities of corresponding technologies and conditions to the generation of the keyholes during the plug process. They include deposition technologies of TiN and deposition conditions of W. Based on the SEM observation and the electromigration failure test, the process conditions of TiN and W have been optimized.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Jong Hun Kim, Kyosun Kim, Seok Hee Jeon, Jong Tae Park,