| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672182 | Microelectronics Reliability | 2005 | 6 Pages |
Abstract
In this work we compare the performance of Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy for the characterization of doping profiles in semiconductor devices. Particular attention is devoted to parameters of paramount importance for the failure analysis and the characterization of silicon devices, like the quantitative one-dimensional profiling accuracy, the electrical junction delineation and the two-dimensional sub-micron imaging capability.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner,