| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672193 | Microelectronics Reliability | 2005 | 8 Pages |
Abstract
The performance and reliability implications of DC-to-RF dispersion effects are addressed. The proposed physical explanations and technological counteractions are reviewed. GaAs- and GaN-based FET technologies are considered, trying to point out both similar and peculiar aspects.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
G. Verzellesi, G. Meneghesso, A. Chini, E. Zanoni, C. Canali,