| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672230 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
The reliability of RF MEMS switches is closely linked to their operational and environmental conditions. This paper examines the reliability of five different capacitive switch designs by a combined use of modeling and experimental tools. Three-dimensional multiphysics finite element analysis was performed to estimate the actuation voltage and deflection vs. temperature variations of the micro-switches. The effect of temperature and temperature cycles on switch dilatation and pull-in voltage are studied, as well as the influence of different operational signals on switch reliability.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Q.-H. Duong, L. Buchaillot, D. Collard, P. Schmitt, X. Lafontan, P. Pons, F. Flourens, F. Pressecq,