| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672231 | Microelectronics Reliability | 2005 | 6 Pages |
Abstract
Device parameter shifts in nMOSFETs subject to inverter-like dynamic voltage stress are examined experimentally. Model equations to relate high-frequency noise to device parameters are given. Dynamic stress-induced degradations in high-frequency noise performance of 0.16 μm nMOSFETs are investigated. Good agreement between the analytical predictions and experimental data is obtained. Noise performance of a Gilbert mixer is evaluated using Cadence SpectreRF simulation with the measured device model parameters.
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Authors
Chuanzhao Yu, J.S. Yuan, Anwar Sadat,