Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9672242 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
In this paper, a simple yet accurate NBTI lifetime model has been formulated for a pMOSFET working in dynamic AC condition. The model is based on detailed dynamic NBTI (DNBTI) characterization for inverter-like waveform stress. The fitting parameters of the model can be readily obtained from the calibration of one-time DNBTI lifetime measurement for a small set of frequency/duty cycle matrix. After that, it can be employed to estimate the NBTI lifetime for a pMOSFET under any AC operating condition with reasonably good agreement. Additionally, it is shown that the lifetime enhancement by a shorter duty cycle is even more significant than that by a higher frequency. The application of the model to the lifetime estimation of circuits with multiple operation modes is also discussed.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Shyue Seng Tan, Tu Pei Chen, Lap Chan,