Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
9672250 | Microelectronics Reliability | 2005 | 7 Pages |
Abstract
DC and low frequency noise measurements have been carried out for double polysilicon NPN bipolar transistors. Our experiments have highlighted unexpected geometrical dependencies for the base saturation current density and low frequency noise. A model, taking into account a variation of the interfacial oxide thickness at the periphery of the emitter has been proposed and it has been successfully applied to the experimental results.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Nicolas Valdaperez, Jean-Marc Routoure, Daniel Bloyet, Régis Carin, Serge Bardy,