| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672255 | Microelectronics Reliability | 2005 | 6 Pages |
Abstract
The paper presents the concept and the verification of a novel silicon monolithic active pixel detector realized in the SOI technology. The reliability and the basic electrical characteristics of the sensor are studied and the sensor sensitivity to the ionising radiation is investigated in details.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
H. Niemiec, A. Bulgheroni, M. Caccia, P. Grabiec, M. Grodner, M. Jastrzab, W. Kucewicz, K. Kucharski, S. Kuta, J. Marczewski, M. Sapor, D. Tomaszewski,