| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672261 | Microelectronics Reliability | 2005 | 5 Pages |
Abstract
In this study mechanical and electrical properties of the RF sputtered hydrogenated amorphous silicon germanium thin films deposited at room temperature have been discussed. Interesting correlation between the resistance and the flow of hydrogen is observed. Further, both band and hopping conduction mechanisms are found to exist simultaneously for the studied amorphous silicon germanium films.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
M. Serényi, J. Betko, Á. Nemcsics, N.Q. Khanh, D.K. Basa, M. Morvic,