| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672283 | Microelectronics Reliability | 2005 | 7 Pages |
Abstract
In this review paper reliability characterisation methods of SiO2 as gate dielectric and metal-insulator-metal capacitors with various dielectrics are discussed. It includes the test structure design, the stress and measurement sequences, the raw data analysis and the extrapolation models of measured time to breakdown to lifetimes at operating conditions and targeted product failure rates. For each topic various references are given where further details are described. Especially pitfalls of approaches and problem areas are highlighted.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
Andreas Martin,