Article ID Journal Published Year Pages File Type
9672284 Microelectronics Reliability 2005 4 Pages PDF
Abstract
In this work we present an experimental evidence of a current dependence of the defect generation probability driving to breakdown. Based on this observation we explain the power law dependence of the charge and the time to breakdown and show its limit on pmos inversion.
Related Topics
Physical Sciences and Engineering Computer Science Hardware and Architecture
Preview
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown
Authors
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