| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672285 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
The I-V characteristics of ultra-thin gate oxides under progressive breakdown (BD) show a common behavior, indicative of well-defined general physical features of the BD spot. Transmission electron microscopy (TEM) observations give some hints about this structure and on this basis we propose a physical model of the post-BD current, which is in good agreement with data.
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Authors
F. Palumbo, G. Condorelli, S. Lombardo, K.L. Pey, C.H. Tung, L.J. Tang,