| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672288 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
Oxide reliability is a key issue and the main topic of several recent works. We study the impact of gate oxide stress on transistor performances following a methodology similar to oxide lifetime characterisation in capacitors. A universal trend for degradation of the threshold voltage and drain saturation current with injected charge is observed and the impact of boron on trapping enhancement has been separated by comparing n-MOS and p-MOS.
Related Topics
Physical Sciences and Engineering
Computer Science
Hardware and Architecture
Authors
G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, A. Ghetti, N. Galbiati, G. Giusto, A. Garavaglia,