| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672289 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
In this work, the influence of oxide breakdown (BD) location on the MOSFET output characteristics has been studied taking into account the devices aspect ratio. The results show that the BD location plays an important role on the device output characteristics for any device geometry. The characteristics have been included on a circuit simulator in order to consider the BD influence on a three stage inverter. The simulation shows that the BD position can play an important role on circuit performance.
Related Topics
Physical Sciences and Engineering
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Authors
R. Fernández, R. RodrıÌguez, M. NafrıÌa, X. Aymerich,