| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 9672292 | Microelectronics Reliability | 2005 | 4 Pages |
Abstract
This work studies the reliability behaviour of gate oxides grown by in situ steam generation technology. A comparison with standard steam oxides is performed, investigating interface and bulk properties. A reduced conduction at low fields and an improved reliability is found for ISSG oxide. The initial lower bulk trapping, but with similar degradation rate with respect to standard oxides, explains the improved reliability results.
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Hardware and Architecture
Authors
M. Langenbuch, R. Bottini, M.E. Vitali, G. Ghidini,