Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3Â nm thick oxides

Experiments were performed on 2.3 nm thin gate oxides. The interface state density and the low voltage stress induced leakage current are compared after uniform and localized stresses. The energy distribution of interface state density in the bandgap is then determined. The normalized variations of interface state density and gate leakage current are shown to be comparable after localized stress but completely different after uniform stresses.